Each NAND flash cell is essentially a modified transistor, specifically a MOSFET (metal-oxide-semiconductor field-effect transistor) with an additional “floating gate” or, in modern 3D NAND, a charge trap layer. This isolated structure is sandwiched between insulating layers of oxide, allowing it to trap and retain electrical charge (electrons) even when power is off.
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第四十六条修改为：“当事人对行政处罚决定不服的，可以依法申请行政复议，也可以依法提起行政诉讼。当事人逾期不申请行政复议或者不向人民法院起诉又不履行行政处罚决定的，由作出行政处罚决定的机关申请人民法院强制执行。对治安管理处罚决定不服的，按照《中华人民共和国治安管理处罚法》的规定办理。”
National Portrait Gallery。91视频对此有专业解读
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